AP200N15TLG1 - аналоги и даташиты транзистора

 

AP200N15TLG1 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP200N15TLG1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 412 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TOLLA-8L
 

 Аналог (замена) для AP200N15TLG1

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP200N15TLG1 Datasheet (PDF)

 ..1. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N15TLG1

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 6.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N15TLG1

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 7.1. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf pdf_icon

AP200N15TLG1

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type135V I =200A DS DR

 7.2. Size:1458K  cn apm
 ap200n10mp.pdf pdf_icon

AP200N15TLG1

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS DR

ПОКАЗАТЬ ЕЩЁ

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History: AP20G03GD

 

 
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