AP30H04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30H04NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.4 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: PDFN5X6-8L
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AP30H04NF Datasheet (PDF)
ap30h04nf.pdf
AP30H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS DR
ap30h04df.pdf
AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS DR
Otros transistores... AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , MMIS60R580P , AP30N02D , AP30N03DF , AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , AP50P03D , AP50P03DF .
History: PHP36N06E | ME2305-G | VN1304 | FDU6030BL | 2SK2849L | SM4370NSKP
History: PHP36N06E | ME2305-G | VN1304 | FDU6030BL | 2SK2849L | SM4370NSKP
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