AP30H04NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30H04NF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.4 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: PDFN5X6-8L

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AP30H04NF datasheet

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 ap30h04nf.pdf pdf_icon

AP30H04NF

AP30H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS D R

 7.1. Size:1390K  cn apm
 ap30h04df.pdf pdf_icon

AP30H04NF

AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS D R

 9.1. Size:637K  1
 ap30h80g.pdf pdf_icon

AP30H04NF

 9.2. Size:590K  1
 ap30h80q.pdf pdf_icon

AP30H04NF

MOSTRAR MÁS

Otros transistores... AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, MMIS60R580P, AP30N02D, AP30N03DF, AP30N06D, AP30N06DF, AP30N06Y, AP30N10D, AP50P03D, AP50P03DF