All MOSFET. AP30H04NF Datasheet

 

AP30H04NF Datasheet and Replacement


   Type Designator: AP30H04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: PDFN5X6-8L
 

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AP30H04NF Datasheet (PDF)

 ..1. Size:1390K  cn apm
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AP30H04NF

AP30H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS DR

 7.1. Size:1390K  cn apm
 ap30h04df.pdf pdf_icon

AP30H04NF

AP30H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP30H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =30A DS DR

 9.1. Size:637K  1
 ap30h80g.pdf pdf_icon

AP30H04NF

 9.2. Size:590K  1
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AP30H04NF

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