AP30N03DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30N03DF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: PDFN3X3-8L
Búsqueda de reemplazo de AP30N03DF MOSFET
AP30N03DF Datasheet (PDF)
ap30n03df.pdf
AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS DR
ap30n06df.pdf
AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR
ap30n06y.pdf
AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR
ap30n06p ap30n06t.pdf
AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR
Otros transistores... AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , BS170 , AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , , , , .
History: AP30N10D | AP30N06DF | AP30N02D
History: AP30N10D | AP30N06DF | AP30N02D
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
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