AP30N03DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30N03DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.8 nS

Cossⓘ - Capacitancia de salida: 81 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: PDFN3X3-8L

 Búsqueda de reemplazo de AP30N03DF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP30N03DF datasheet

 ..1. Size:1290K  cn apm
 ap30n03df.pdf pdf_icon

AP30N03DF

AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R

 7.1. Size:1972K  allpower
 ap30n03k.pdf pdf_icon

AP30N03DF

 8.1. Size:808K  allpower
 ap30n04k.pdf pdf_icon

AP30N03DF

 8.2. Size:1427K  cn apm
 ap30n06df.pdf pdf_icon

AP30N03DF

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

MOSTRAR MÁS

Otros transistores... AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AO4407A, AP30N06D, AP30N06DF, AP30N06Y, AP30N10D, AP50P03D, AP50P03DF, AP50P03NF, AP50P04D