All MOSFET. AP30N03DF Datasheet

 

AP30N03DF Datasheet and Replacement


   Type Designator: AP30N03DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: PDFN3X3-8L
 

 AP30N03DF substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP30N03DF Datasheet (PDF)

 ..1. Size:1290K  cn apm
 ap30n03df.pdf pdf_icon

AP30N03DF

AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS DR

 8.1. Size:1427K  cn apm
 ap30n06df.pdf pdf_icon

AP30N03DF

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 8.2. Size:1476K  cn apm
 ap30n06y.pdf pdf_icon

AP30N03DF

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 8.3. Size:1645K  cn apm
 ap30n06p ap30n06t.pdf pdf_icon

AP30N03DF

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

SHOW MORE

Datasheet: AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , BS170 , AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , , , , .

Keywords - AP30N03DF MOSFET datasheet

 AP30N03DF cross reference
 AP30N03DF equivalent finder
 AP30N03DF lookup
 AP30N03DF substitution
 AP30N03DF replacement

 

 
Back to Top

 


 
.