AP30N06DF Todos los transistores

 

AP30N06DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30N06DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.6 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: PDFN3X3-6L
 

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AP30N06DF Datasheet (PDF)

 ..1. Size:1427K  cn apm
 ap30n06df.pdf pdf_icon

AP30N06DF

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 6.1. Size:1207K  cn apm
 ap30n06d.pdf pdf_icon

AP30N06DF

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS DR

 7.1. Size:1476K  cn apm
 ap30n06y.pdf pdf_icon

AP30N06DF

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

 7.2. Size:1645K  cn apm
 ap30n06p ap30n06t.pdf pdf_icon

AP30N06DF

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

MOSTRAR MÁS

Otros transistores... AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , AP30N06D , 5N50 , AP30N06Y , AP30N10D , , , , , , .

History: AP30H04NF | AP30N02D

 

 
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