AP30N06DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30N06DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.6 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: PDFN3X3-6L

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AP30N06DF datasheet

 ..1. Size:1427K  cn apm
 ap30n06df.pdf pdf_icon

AP30N06DF

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 6.1. Size:1207K  cn apm
 ap30n06d.pdf pdf_icon

AP30N06DF

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R

 7.1. Size:1476K  cn apm
 ap30n06y.pdf pdf_icon

AP30N06DF

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 7.2. Size:1645K  cn apm
 ap30n06p ap30n06t.pdf pdf_icon

AP30N06DF

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

MOSTRAR MÁS

Otros transistores... AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AP30N03DF, AP30N06D, IRFP064N, AP30N06Y, AP30N10D, AP50P03D, AP50P03DF, AP50P03NF, AP50P04D, AP50P04DF, AP50P10D