AP30N06DF MOSFET: N-Ch, 60V, 30A. Full datasheet with pinout, specifications and replacement transistor list

AP30N06DF Datasheet (PDF)

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AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

6.1. Size:1207K cn apm
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AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS DR

7.1. Size:1476K cn apm
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AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

7.2. Size:1645K cn apm
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AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS DR

Datasheet: AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , AP30N06D , IRFP064N , AP30N06Y , AP30N10D , AP50P03D , AP50P03DF , AP50P03NF , AP50P04D , AP50P04DF , AP50P10D .