AP5N10SI Todos los transistores

 

AP5N10SI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP5N10SI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT89
 

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AP5N10SI Datasheet (PDF)

 ..1. Size:1620K  cn apm
 ap5n10si.pdf pdf_icon

AP5N10SI

AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 8.1. Size:1712K  cn apm
 ap5n10mi.pdf pdf_icon

AP5N10SI

AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 8.2. Size:1018K  cn apm
 ap5n10bi.pdf pdf_icon

AP5N10SI

AP5N10BI100V N-Channel Enhancement Mode MOSFETDescriptionThe AP5N10BI uses advanced APM-SGTII technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.General FeaturesV = 100V I =5.0ADS DR

 8.3. Size:1365K  cn apm
 ap5n10bsi.pdf pdf_icon

AP5N10SI

AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

MOSTRAR MÁS

Otros transistores... AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , AP5N06MI , AP5N10BI , AP5N10BSI , AP5N10MI , IRF640N , AP6N10MI , AP6N12MI , AP6N40D , AP6P03SI , AP6P06MI , AP70N02DF , AP70N02NF , AP70N03NF .

History: OSG70R600AF | GSM3981 | CJPF03N80

 

 
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