AP5N10SI Datasheet and Replacement. Cross Reference Search

AP5N10SI Datasheet (PDF)

..1. Size:1620K cn apm
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AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

8.1. Size:1712K cn apm
ap5n10mi.pdf pdf_icon

AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

8.2. Size:1018K cn apm
ap5n10bi.pdf pdf_icon

AP5N10BI100V N-Channel Enhancement Mode MOSFETDescriptionThe AP5N10BI uses advanced APM-SGTII technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.General FeaturesV = 100V I =5.0ADS DR

8.3. Size:1365K cn apm
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AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

Datasheet: AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , AP5N06MI , AP5N10BI , AP5N10BSI , AP5N10MI , IRFP260N , , , , , , , , .