AP6P03SI Todos los transistores

 

AP6P03SI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P03SI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT89
 

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AP6P03SI Datasheet (PDF)

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AP6P03SI

AP6P03SI -30V P-Channel Enhancement Mode MOSFET Description The AP6P03SI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS DR

 9.1. Size:181K  ape
 ap6p064i.pdf pdf_icon

AP6P03SI

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 9.2. Size:168K  ape
 ap6p064j.pdf pdf_icon

AP6P03SI

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 9.3. Size:182K  ape
 ap6p070i.pdf pdf_icon

AP6P03SI

AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

MOSTRAR MÁS

Otros transistores... AP5N06MI , AP5N10BI , AP5N10BSI , AP5N10MI , AP5N10SI , AP6N10MI , AP6N12MI , AP6N40D , IRF3710 , AP6P06MI , AP70N02DF , AP70N02NF , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF .

History: JMTE025N04D

 

 
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