AP6P03SI. Аналоги и основные параметры

Наименование производителя: AP6P03SI

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.15 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 61 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm

Тип корпуса: SOT89

Аналог (замена) для AP6P03SI

- подборⓘ MOSFET транзистора по параметрам

 

AP6P03SI даташит

 ..1. Size:1170K  cn apm
ap6p03si.pdfpdf_icon

AP6P03SI

AP6P03SI -30V P-Channel Enhancement Mode MOSFET Description The AP6P03SI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS D R

 9.1. Size:181K  ape
ap6p064i.pdfpdf_icon

AP6P03SI

AP6P064I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 9.2. Size:168K  ape
ap6p064j.pdfpdf_icon

AP6P03SI

AP6P064J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and G D silicon process technology to achieve the low

 9.3. Size:182K  ape
ap6p070i.pdfpdf_icon

AP6P03SI

AP6P070I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16A G RoHS Compliant & Halogen-Free S Description AP6P070 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

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