AP6P03SI - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP6P03SI
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 6
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 61
ns
Cossⓘ - Выходная емкость: 95
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09
Ohm
Тип корпуса:
SOT89
Аналог (замена) для AP6P03SI
-
подбор ⓘ MOSFET транзистора по параметрам
AP6P03SI Datasheet (PDF)
..1. Size:1170K cn apm
ap6p03si.pdf 
AP6P03SI -30V P-Channel Enhancement Mode MOSFET Description The AP6P03SI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS DR
9.1. Size:181K ape
ap6p064i.pdf 
AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
9.2. Size:168K ape
ap6p064j.pdf 
AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
9.3. Size:182K ape
ap6p070i.pdf 
AP6P070IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID4 -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
9.4. Size:204K ape
ap6p064h.pdf 
AP6P064HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
9.5. Size:205K ape
ap6p070h.pdf 
AP6P070HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
9.6. Size:165K ape
ap6p070p.pdf 
AP6P070PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
9.7. Size:204K ape
ap6p090h.pdf 
AP6P090HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
9.8. Size:169K ape
ap6p090j.pdf 
AP6P090JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
9.9. Size:67K ape
ap6p025m.pdf 
AP6P025MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P025 series are from Advanced Power innovated design and siliconDDprocess technology to achieve
9.10. Size:204K ape
ap6p025h.pdf 
AP6P025HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
9.11. Size:177K ape
ap6p025s.pdf 
AP6P025SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
9.12. Size:186K ape
ap6p090m.pdf 
AP6P090MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P090 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t
9.13. Size:165K ape
ap6p025p.pdf 
AP6P025PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
9.14. Size:144K ape
ap6p064jb.pdf 
AP6P064JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
9.15. Size:71K ape
ap6p070s.pdf 
AP6P070SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16AG RoHS Compliant & Halogen-FreeSDescriptionAP6P070 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
9.16. Size:182K ape
ap6p025i.pdf 
AP6P025IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -26.8AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
9.17. Size:1467K cn apm
ap6p06mi.pdf 
AP6P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP6P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-6A DS DR
9.18. Size:1762K cn apm
ap6p04s.pdf 
AP6P04S -40V P-Channel Enhancement Mode MOSFET Description The AP6P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-6.0A DS DR
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History: ME7232S
| JMSL0406AU
| JMTE025N04D
