AP70N06HD Todos los transistores

 

AP70N06HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70N06HD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252
 

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AP70N06HD Datasheet (PDF)

 ..1. Size:1534K  cn apm
 ap70n06hd.pdf pdf_icon

AP70N06HD

AP70N06HD 60V N-Channel Enhancement Mode MOSFET Description The AP70N06HD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS DR

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N06HD

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS DR

 8.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N06HD

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

 8.3. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N06HD

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

MOSTRAR MÁS

Otros transistores... AP6N12MI , AP6N40D , AP6P03SI , AP6P06MI , AP70N02DF , AP70N02NF , AP70N03NF , AP70N04NF , 8205A , AP70N12D , AP70N12NF , AP70P02D , AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , AP20G04NF .

History: TDM3508 | ME60N04-G

 

 
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