AP70N06HD. Аналоги и основные параметры

Наименование производителя: AP70N06HD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9.2 ns

Cossⓘ - Выходная емкость: 210 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: TO252

Аналог (замена) для AP70N06HD

- подборⓘ MOSFET транзистора по параметрам

 

AP70N06HD даташит

 ..1. Size:1534K  cn apm
 ap70n06hd.pdf pdf_icon

AP70N06HD

AP70N06HD 60V N-Channel Enhancement Mode MOSFET Description The AP70N06HD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS D R

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N06HD

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS D R

 8.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N06HD

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 8.3. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N06HD

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP6N12MI, AP6N40D, AP6P03SI, AP6P06MI, AP70N02DF, AP70N02NF, AP70N03NF, AP70N04NF, 8205A, AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF