AP70N12D Todos los transistores

 ..1. Size:1703K  cn apm
 ap70n12d.pdf

AP70N12D 120V N-Channel Enhancement Mode MOSFET Description The AP70N12D uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS D R

 7.1. Size:1653K  cn apm
 ap70n12nf.pdf

AP70N12NF 120V N-Channel Enhancement Mode MOSFET Description The AP70N12NF uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS D R

 8.1. Size:1742K  allpower
 ap70n100k.pdf

 9.1. Size:1530K  cn apm
 ap70n04nf.pdf

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS D R

 9.2. Size:4048K  cn apm
 ap70n03df.pdf

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 9.3. Size:1310K  cn apm
 ap70n02df.pdf

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R

 9.4. Size:2676K  cn apm
 ap70n03nf.pdf

AP70N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 9.5. Size:1534K  cn apm
 ap70n06hd.pdf

AP70N06HD 60V N-Channel Enhancement Mode MOSFET Description The AP70N06HD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS D R

 9.6. Size:1293K  cn apm
 ap70n02nf.pdf

AP70N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R