All MOSFET. AP70N12D Datasheet

 

AP70N12D Datasheet and Replacement


   Type Designator: AP70N12D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

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AP70N12D Datasheet (PDF)

 ..1. Size:1703K  cn apm
 ap70n12d.pdf pdf_icon

AP70N12D

AP70N12D 120V N-Channel Enhancement Mode MOSFET Description The AP70N12D uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS DR

 7.1. Size:1653K  cn apm
 ap70n12nf.pdf pdf_icon

AP70N12D

AP70N12NF 120V N-Channel Enhancement Mode MOSFET Description The AP70N12NF uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS DR

 9.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N12D

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS DR

 9.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N12D

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

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Keywords - AP70N12D MOSFET datasheet

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