AP70P02D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP70P02D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 29 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76.8 nS
Cossⓘ - Capacitancia de salida: 509 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP70P02D MOSFET
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AP70P02D datasheet
ap70p02d.pdf
AP70P02D -20V P-Channel Enhancement Mode MOSFET Description The AP70P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-70A DS D R
ap70p03d.pdf
AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
ap70p03nf.pdf
AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
Otros transistores... AP6P06MI, AP70N02DF, AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D, AP70N12NF, IRF630, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF
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