AP70P02D - аналоги и даташиты транзистора

 

AP70P02D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP70P02D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 76.8 ns
   Cossⓘ - Выходная емкость: 509 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP70P02D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP70P02D Datasheet (PDF)

 ..1. Size:1090K  cn apm
 ap70p02d.pdf pdf_icon

AP70P02D

AP70P02D -20V P-Channel Enhancement Mode MOSFET Description The AP70P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-70A DS DR

 8.1. Size:1663K  cn apm
 ap70p03d.pdf pdf_icon

AP70P02D

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 8.2. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P02D

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 8.3. Size:1495K  cn apm
 ap70p03df.pdf pdf_icon

AP70P02D

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP6P06MI , AP70N02DF , AP70N02NF , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF , IRF9540 , AP70P03D , AP70P03DF , , , , , , .

History: AP70N04NF | AP70N12D

 

 
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