AP70P03DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP70P03DF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13.2 nS
Cossⓘ - Capacitancia de salida: 465 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: PDFN3X3-8L
Búsqueda de reemplazo de AP70P03DF MOSFET
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AP70P03DF datasheet
ap70p03df.pdf
AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R
ap70p03d.pdf
AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
ap70p03nf.pdf
AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
Otros transistores... AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AON7408, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF
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