AP70P03DF Specs and Replacement

Type Designator: AP70P03DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.2 nS

Cossⓘ - Output Capacitance: 465 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: PDFN3X3-8L

AP70P03DF substitution

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AP70P03DF datasheet

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 ap70p03df.pdf pdf_icon

AP70P03DF

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R ... See More ⇒

 6.1. Size:1663K  cn apm
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AP70P03DF

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

 7.1. Size:1952K  allpower
 ap70p03k.pdf pdf_icon

AP70P03DF

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 7.2. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P03DF

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

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Detailed specifications: AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AON7408, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF

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