AP20N06BD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP20N06BD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 24 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 49 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP20N06BD MOSFET
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AP20N06BD datasheet
ap20n06bd.pdf
AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R
ap20n06s.pdf
AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R
ap20n06d.pdf
AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS D R
Otros transistores... AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, SPP20N60C3, AP20N06D, AP20N06S, AP20N10D, AP20P01BF, SSC8415GS6, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2
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