AP20N06BD Specs and Replacement

Type Designator: AP20N06BD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: TO252

AP20N06BD substitution

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AP20N06BD datasheet

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 ap20n06bd.pdf pdf_icon

AP20N06BD

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R ... See More ⇒

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AP20N06BD

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 ap20n06s.pdf pdf_icon

AP20N06BD

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R ... See More ⇒

 7.3. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06BD

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS D R ... See More ⇒

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Detailed specifications: AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, SPP20N60C3, AP20N06D, AP20N06S, AP20N10D, AP20P01BF, SSC8415GS6, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2

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