AP20N06S Todos los transistores

 

AP20N06S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20N06S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.16 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 94 nS
   Cossⓘ - Capacitancia de salida: 261 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SOP8
 

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AP20N06S Datasheet (PDF)

 ..1. Size:1438K  cn apm
 ap20n06s.pdf pdf_icon

AP20N06S

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 7.1. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06S

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS DR

 7.2. Size:1581K  cn apm
 ap20n06bd.pdf pdf_icon

AP20N06S

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 8.1. Size:1150K  cn apm
 ap20n02bf.pdf pdf_icon

AP20N06S

AP20N02BF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

MOSTRAR MÁS

Otros transistores... AP20H02S , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , K4145 , AP20N10D , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 .

History: PJA3412 | SSC8K23GN2 | PJA3414 | ME3483-G | TW1525SI | WST3406A | NCE3407A

 

 
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