AP20N06S - аналоги и даташиты транзистора

 

AP20N06S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20N06S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.16 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 94 ns
   Cossⓘ - Выходная емкость: 261 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для AP20N06S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP20N06S Datasheet (PDF)

 ..1. Size:1438K  cn apm
 ap20n06s.pdf pdf_icon

AP20N06S

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 7.1. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06S

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS DR

 7.2. Size:1581K  cn apm
 ap20n06bd.pdf pdf_icon

AP20N06S

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 8.1. Size:1150K  cn apm
 ap20n02bf.pdf pdf_icon

AP20N06S

AP20N02BF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP20H02S , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , K4145 , AP20N10D , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 .

History: TW1754SI-X | HCS65R165ST | ME3920D | TW1527SI | JMTM330N06A | HCS65R450ST | GSM3426

 

 
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