AP20N06S - аналоги и даташиты транзистора

 

AP20N06S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20N06S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.16 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 94 ns
   Cossⓘ - Выходная емкость: 261 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для AP20N06S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP20N06S Datasheet (PDF)

 ..1. Size:1438K  cn apm
 ap20n06s.pdf pdf_icon

AP20N06S

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 7.1. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06S

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS DR

 7.2. Size:1581K  cn apm
 ap20n06bd.pdf pdf_icon

AP20N06S

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 8.1. Size:1150K  cn apm
 ap20n02bf.pdf pdf_icon

AP20N06S

AP20N02BF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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