AP3N10BI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N10BI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de AP3N10BI MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP3N10BI datasheet

 ..1. Size:1217K  cn apm
 ap3n10bi.pdf pdf_icon

AP3N10BI

AP3N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP3N10BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =2.8 A DS D R

 9.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N10BI

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 9.2. Size:63K  ape
 ap3n1r7cyt.pdf pdf_icon

AP3N10BI

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

 9.3. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N10BI

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

MOSTRAR MÁS

Otros transistores... SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, AP3410MI, AP3415A, AP35H04NF, AP3N06I, AP3N06MI, TK10A60D, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF