AP3N10BI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3N10BI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 29 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
Paquete / Cubierta: SOT23
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AP3N10BI Datasheet (PDF)
ap3n10bi.pdf
AP3N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP3N10BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =2.8 A DS DR
ap3n1r8mt.pdf
AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the
ap3n1r7cyt.pdf
AP3N1R7CYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-FreeGSDDDescriptionDDAP3N1R7C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resi
ap3n1r8p.pdf
AP3N1R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N1R8 seriesare fromAdvanced Power innovated
Otros transistores... SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , 13N50 , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF .
History: AP3P10MI | AP3P10S
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP40H10NF | AP40H04NF | AP40G03NF | AP3P10S | AP3P10MI | AP3P06LI | AP3P06BI | AP3P06AI | AP3N50D | AP3N10BI | AP3N06MI | AP3N06I | AP35H04NF | AP3415A | AP3410MI | SSC8P22CN2
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