AP3N10BI datasheet, аналоги, основные параметры

Наименование производителя: AP3N10BI

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 19 ns

Cossⓘ - Выходная емкость: 29 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm

Тип корпуса: SOT23

Аналог (замена) для AP3N10BI

- подборⓘ MOSFET транзистора по параметрам

 

AP3N10BI даташит

 ..1. Size:1217K  cn apm
 ap3n10bi.pdf pdf_icon

AP3N10BI

AP3N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP3N10BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =2.8 A DS D R

 9.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N10BI

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 9.2. Size:63K  ape
 ap3n1r7cyt.pdf pdf_icon

AP3N10BI

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

 9.3. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N10BI

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

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