AP3N10BI - Даташиты. Аналоги. Основные параметры

AP3N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP3N10BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =2.8 A DS D R

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

AP3N1R0MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 1.05m Ultra Low On-resistance ID4 245A G RoHS Compliant & Halogen-Free D S D D Description D AP3N1R0 series are from Advanced Power innovated design and silicon process technology to achieve the

AP3N1R8MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D D Description D AP3N1R8 series are from Advanced Power innovated design and silicon process technology to achieve th

AP3N1R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N1R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po