AP3P06AI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP3P06AI Datasheet (PDF)

..1. Size:2081K cn apm
ap3p06ai.pdf pdf_icon

AP3P06AI-60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON)

8.1. Size:1382K cn apm
ap3p06li.pdf pdf_icon

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

8.2. Size:1298K cn apm
ap3p06bi.pdf pdf_icon

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS DR

8.3. Size:1865K cn apm
ap3p06mi.pdf pdf_icon

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

Otros transistores... SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , BS170 , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , ATM06P50TC .