AP3P06AI - аналоги и даташиты транзистора

 

AP3P06AI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP3P06AI
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.4 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для AP3P06AI

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3P06AI Datasheet (PDF)

 ..1. Size:2081K  cn apm
 ap3p06ai.pdf pdf_icon

AP3P06AI

AP3P06AI-60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON)

 8.1. Size:1382K  cn apm
 ap3p06li.pdf pdf_icon

AP3P06AI

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

 8.2. Size:1298K  cn apm
 ap3p06bi.pdf pdf_icon

AP3P06AI

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS DR

 8.3. Size:1865K  cn apm
 ap3p06mi.pdf pdf_icon

AP3P06AI

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , CS150N03A8 , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , .

 

 
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