AP3P06BI Todos los transistores

 

AP3P06BI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P06BI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.4 nS
   Cossⓘ - Capacitancia de salida: 59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT23
 

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AP3P06BI Datasheet (PDF)

 ..1. Size:1298K  cn apm
 ap3p06bi.pdf pdf_icon

AP3P06BI

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS DR

 8.1. Size:1382K  cn apm
 ap3p06li.pdf pdf_icon

AP3P06BI

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

 8.2. Size:1865K  cn apm
 ap3p06mi.pdf pdf_icon

AP3P06BI

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS DR

 8.3. Size:2081K  cn apm
 ap3p06ai.pdf pdf_icon

AP3P06BI

AP3P06AI-60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON)

MOSTRAR MÁS

Otros transistores... AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , 2SK3568 , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , , .

 

 
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