AP3P06BI Datasheet. Specs and Replacement

Type Designator: AP3P06BI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

AP3P06BI substitution

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AP3P06BI datasheet

 ..1. Size:1298K  cn apm
 ap3p06bi.pdf pdf_icon

AP3P06BI

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS D R ... See More ⇒

 8.1. Size:1382K  cn apm
 ap3p06li.pdf pdf_icon

AP3P06BI

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R ... See More ⇒

 8.2. Size:1865K  cn apm
 ap3p06mi.pdf pdf_icon

AP3P06BI

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R ... See More ⇒

 8.3. Size:2081K  cn apm
 ap3p06ai.pdf pdf_icon

AP3P06BI

AP3P06AI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON) ... See More ⇒

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Detailed specifications: AP3410MI, AP3415A, AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, 4N60, AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ

Keywords - AP3P06BI MOSFET specs

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