ZXMN3F31DN8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN3F31DN8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 608 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: SO8

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ZXMN3F31DN8 datasheet

 ..1. Size:427K  diodes
 zxmn3f31dn8.pdf pdf_icon

ZXMN3F31DN8

ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D1 D2 Low on-resistance 4.5V gate drive capability G1 G2 Applications DC-DC Converters S1 S2 Po

 7.1. Size:411K  diodes
 zxmn3f30fh.pdf pdf_icon

ZXMN3F31DN8

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m

 7.2. Size:106K  tysemi
 zxmn3f30fh.pdf pdf_icon

ZXMN3F31DN8

Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Con

 7.3. Size:408K  zetex
 zxmn3f30fhta.pdf pdf_icon

ZXMN3F31DN8

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m

MOSTRAR MÁS

Otros transistores... ZXMN3A06DN8, ZXMN3A14F, ZXMN3AMC, ZXMN3B01F, ZXMN3B04N8, ZXMN3B14F, ZXMN3F30FH, ZXMN3F318DN8, AO4468, ZXMN3G32DN8, 2N7002(Z), 2N7002A, STU442S, 2N7002E, STU441S, STU446S, 2N7002VAC