All MOSFET. ZXMN3F31DN8 Datasheet

 

ZXMN3F31DN8 MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMN3F31DN8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7.3 A

Total Gate Charge (Qg): 12.9 nC

Drain-Source Capacitance (Cd): 608 pF

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: SO8

ZXMN3F31DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMN3F31DN8 Datasheet (PDF)

1.1. zxmn3f31dn8.pdf Size:427K _diodes

ZXMN3F31DN8
ZXMN3F31DN8

ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D1 D2 Low on-resistance 4.5V gate drive capability G1 G2 Applications DC-DC Converters S1 S2 Power manageme

3.1. zxmn3f30fhta.pdf Size:408K _upd-mosfet

ZXMN3F31DN8
ZXMN3F31DN8

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D • Low on-resistance • 4.5V gate drive capability • SOT23 G Applications S • DC-DC Converters • Power m

3.2. zxmn3f30fh.pdf Size:411K _diodes

ZXMN3F31DN8
ZXMN3F31DN8

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power management func

 3.3. zxmn3f30fh.pdf Size:106K _tysemi

ZXMN3F31DN8
ZXMN3F31DN8

Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D • Low on-resistance • 4.5V gate drive capability • SOT23 G Applications S • DC-DC Con

Datasheet: ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , 2SK2837 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC .

 
Back to Top