ZXMN3F31DN8 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN3F31DN8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7.3 A
Total Gate Charge (Qg): 12.9 nC
Drain-Source Capacitance (Cd): 608 pF
Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
Package: SO8
ZXMN3F31DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN3F31DN8 Datasheet (PDF)
1.1. zxmn3f31dn8.pdf 
Size:427K _diodes
ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D1 D2 Low on-resistance 4.5V gate drive capability G1 G2 Applications DC-DC Converters S1 S2 Power manageme
3.1. zxmn3f30fhta.pdf Size:408K _upd-mosfet
ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D • Low on-resistance • 4.5V gate drive capability • SOT23 G Applications S • DC-DC Converters • Power m
3.2. zxmn3f30fh.pdf Size:411K _diodes
ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power management func
3.3. zxmn3f30fh.pdf Size:106K _tysemi
Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D • Low on-resistance • 4.5V gate drive capability • SOT23 G Applications S • DC-DC Con
Datasheet: ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , 2SK2837 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC .
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