ATM2N65TD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATM2N65TD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO251

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ATM2N65TD datasheet

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ATM2N65TD

ATM2N65TD N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TD is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

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ATM2N65TD

ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

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 atm2n65te.pdf pdf_icon

ATM2N65TD

ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

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