ATM2N65TD Datasheet. Specs and Replacement

Type Designator: ATM2N65TD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO251

ATM2N65TD substitution

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ATM2N65TD datasheet

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ATM2N65TD

ATM2N65TD N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TD is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw... See More ⇒

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ATM2N65TD

ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw... See More ⇒

 6.2. Size:488K  agertech
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ATM2N65TD

ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw... See More ⇒

Detailed specifications: AP4959A, AP5N15MSI, AP5N20D, AP5N20D-H, AP5N30D, ATM2320KNSQ, ATM2602NSG, ATM2604KNSG, IRFZ46N, ATM3003PSA, ATM3400NSA, ATM3401APSA, ATM3401PSA, AP6H03S, AP6N03LI, AP6N03SI, AP6N04SI

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