ATM2N65TD Datasheet and Replacement
Type Designator: ATM2N65TD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO251
ATM2N65TD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ATM2N65TD Datasheet (PDF)
atm2n65td.pdf
ATM2N65TD N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TD is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
atm2n65tf.pdf
ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
atm2n65te.pdf
ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
Datasheet: AP4959A , AP5N15MSI , AP5N20D , AP5N20D-H , AP5N30D , ATM2320KNSQ , ATM2602NSG , ATM2604KNSG , IRFZ46N , ATM3003PSA , ATM3400NSA , ATM3401APSA , ATM3401PSA , AP6H03S , AP6N03LI , AP6N03SI , AP6N04SI .
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