AP80P06NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP80P06NF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: PDFN5X6-8L
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AP80P06NF datasheet
ap80p06nf.pdf
AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p06d.pdf
AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p06p ap80p06t.pdf
AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R
Otros transistores... ATM3401APSA, ATM3401PSA, AP6H03S, AP6N03LI, AP6N03SI, AP6N04SI, AP70P03NF, AP7N50D, AO4407A, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1, AP220N10MP
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