AP80P06NF - аналоги и даташиты транзистора

 

AP80P06NF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP80P06NF
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2.5 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: PDFN5X6-8L

 Аналог (замена) для AP80P06NF

 

AP80P06NF Datasheet (PDF)

 ..1. Size:1789K  cn apm
 ap80p06nf.pdf pdf_icon

AP80P06NF

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 7.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P06NF

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 7.2. Size:1715K  cn apm
 ap80p06p ap80p06t.pdf pdf_icon

AP80P06NF

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS DR

 8.1. Size:508K  allpower
 ap80p04k.pdf pdf_icon

AP80P06NF

ПОКАЗАТЬ ЕЩЁ

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History: ATM3003PSA | ATM3400NSA

 

 
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