AP20P02BF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20P02BF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 685 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: QFN2X2-6L

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AP20P02BF datasheet

 ..1. Size:1216K  cn apm
 ap20p02bf.pdf pdf_icon

AP20P02BF

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.1. Size:80K  ape
 ap20p02gh ap20p02gj.pdf pdf_icon

AP20P02BF

AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw

 7.2. Size:2702K  cn apm
 ap20p02d.pdf pdf_icon

AP20P02BF

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.3. Size:1388K  cn apm
 ap20p02si.pdf pdf_icon

AP20P02BF

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

MOSTRAR MÁS

Otros transistores... ATM3401PSA, AP6H03S, AP6N03LI, AP6N03SI, AP6N04SI, AP70P03NF, AP7N50D, AP80P06NF, 60N06, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1, AP220N10MP, AP2222D