AP20P02BF Todos los transistores

 

AP20P02BF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20P02BF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 685 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: QFN2X2-6L

 Búsqueda de reemplazo de MOSFET AP20P02BF

 

AP20P02BF Datasheet (PDF)

 ..1. Size:1216K  cn apm
 ap20p02bf.pdf pdf_icon

AP20P02BF

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.1. Size:80K  ape
 ap20p02gh ap20p02gj.pdf pdf_icon

AP20P02BF

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

 7.2. Size:2702K  cn apm
 ap20p02d.pdf pdf_icon

AP20P02BF

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.3. Size:1388K  cn apm
 ap20p02si.pdf pdf_icon

AP20P02BF

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

MOSTRAR MÁS

Otros transistores... ATM3401PSA , AP6H03S , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , 60N06 , AP20P02D , AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D .

 

 
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