AP20P02BF datasheet, аналоги, основные параметры

Наименование производителя: AP20P02BF

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 19 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 48 ns

Cossⓘ - Выходная емкость: 685 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm

Тип корпуса: QFN2X2-6L

Аналог (замена) для AP20P02BF

- подборⓘ MOSFET транзистора по параметрам

 

AP20P02BF даташит

 ..1. Size:1216K  cn apm
 ap20p02bf.pdf pdf_icon

AP20P02BF

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.1. Size:80K  ape
 ap20p02gh ap20p02gj.pdf pdf_icon

AP20P02BF

AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw

 7.2. Size:2702K  cn apm
 ap20p02d.pdf pdf_icon

AP20P02BF

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.3. Size:1388K  cn apm
 ap20p02si.pdf pdf_icon

AP20P02BF

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

ПОКАЗАТЬ ЕЩЁ

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