AP20P02SI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP20P02SI Datasheet (PDF)

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AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

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AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

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AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

7.3. Size:1216K cn apm
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AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

Otros transistores... AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , AP20P02BF , AP20P02D , AO4468 , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD .