AP20P02SI - аналоги и даташиты транзистора

 

AP20P02SI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20P02SI
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 4.31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33.6 ns
   Cossⓘ - Выходная емкость: 114 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: SOT89

 Аналог (замена) для AP20P02SI

 

AP20P02SI Datasheet (PDF)

 ..1. Size:1388K  cn apm
ap20p02si.pdfpdf_icon

AP20P02SI

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.1. Size:80K  ape
ap20p02gh ap20p02gj.pdfpdf_icon

AP20P02SI

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

 7.2. Size:2702K  cn apm
ap20p02d.pdfpdf_icon

AP20P02SI

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.3. Size:1216K  cn apm
ap20p02bf.pdfpdf_icon

AP20P02SI

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

Другие MOSFET... AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , AP20P02BF , AP20P02D , AO4468 , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD .

 

 
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