AP220N08TLG1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP220N08TLG1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 284 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 808 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TOLLA-8L
Búsqueda de reemplazo de MOSFET AP220N08TLG1
AP220N08TLG1 Datasheet (PDF)
ap220n08tlg1.pdf
AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS DR
ap220n06mp.pdf
AP220N06MP 60V N-Channel Enhancement Mode MOSFET Description The AP220N06MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =220A DS DR
ap220n10mp.pdf
AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS DR
Otros transistores... AP7N50D , AP80P06NF , AP20P02BF , AP20P02D , AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , IRF740 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD , AP25G04GD , AP25N04D , AP25N04S , AP4406A .
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