AP220N08TLG1 Datasheet. Specs and Replacement

Type Designator: AP220N08TLG1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 284 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 808 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TOLLA-8L

AP220N08TLG1 substitution

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AP220N08TLG1 datasheet

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AP220N08TLG1

AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS D R ... See More ⇒

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 ap220n04p ap220n04t.pdf pdf_icon

AP220N08TLG1

AP220N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP220N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =220A DS D R ... See More ⇒

 7.2. Size:1929K  cn apm
 ap220n06mp.pdf pdf_icon

AP220N08TLG1

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 8.1. Size:1423K  cn apm
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AP220N08TLG1

AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS D R ... See More ⇒

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Detailed specifications: AP7N50D, AP80P06NF, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, IRF740, AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, AP25N04D, AP25N04S, AP4406A

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