AP220N08TLG1 Datasheet and Replacement
Type Designator: AP220N08TLG1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 284 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 808 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TOLLA-8L
AP220N08TLG1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP220N08TLG1 Datasheet (PDF)
ap220n08tlg1.pdf
AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS DR
ap220n06mp.pdf
AP220N06MP 60V N-Channel Enhancement Mode MOSFET Description The AP220N06MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =220A DS DR
ap220n10mp.pdf
AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS DR
Datasheet: AP7N50D , AP80P06NF , AP20P02BF , AP20P02D , AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , IRF740 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD , AP25G04GD , AP25N04D , AP25N04S , AP4406A .
History: AP20P02BF
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP20P02BF
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