AP220N10MP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP220N10MP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 296 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 1290 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: TO247
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AP220N10MP datasheet
ap220n10mp.pdf
AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS D R
ap220n04p ap220n04t.pdf
AP220N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP220N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =220A DS D R
ap220n08tlg1.pdf
AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS D R
Otros transistores... AP80P06NF, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1, IRF840, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, AP25N04D, AP25N04S, AP4406A, AP4406B
History: AON7246E | AP3N50D
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