AP220N10MP Datasheet. Specs and Replacement
Type Designator: AP220N10MP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 296 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO247
AP220N10MP substitution
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AP220N10MP datasheet
ap220n10mp.pdf
AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS D R ... See More ⇒
ap220n04p ap220n04t.pdf
AP220N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP220N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =220A DS D R ... See More ⇒
ap220n08tlg1.pdf
AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS D R ... See More ⇒
Detailed specifications: AP80P06NF, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1, IRF840, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, AP25N04D, AP25N04S, AP4406A, AP4406B
Keywords - AP220N10MP MOSFET specs
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