AP25G03GD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP25G03GD
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 18 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TO252-4L
Búsqueda de reemplazo de AP25G03GD MOSFET
AP25G03GD Datasheet (PDF)
ap25g03gd.pdf
AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS DR
ap25g02nf.pdf
AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS DR
ap25g04gd.pdf
AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =28 A DS DR
ap25g45em.pdf
AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi
Otros transistores... AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , IRF540 , AP25G04GD , AP25N04D , AP25N04S , , , , , .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP25N04S | AP25N04D | AP25G04GD | AP25G03GD | AP25G02NF | AP2222D | AP220N10MP | AP220N08TLG1 | AP20P04D | AP20P03DF | AP20P03D | AP20P02SI | AP20P02D | AP20P02BF | AP80P06NF | AP7N50D
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