All MOSFET. AP25G03GD Datasheet

 

AP25G03GD Datasheet and Replacement


   Type Designator: AP25G03GD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252-4L

 AP25G03GD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP25G03GD Datasheet (PDF)

 ..1. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G03GD

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS DR

 8.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G03GD

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS DR

 8.2. Size:1513K  cn apm
 ap25g04gd.pdf pdf_icon

AP25G03GD

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =28 A DS DR

 9.1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G03GD

AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi

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Datasheet: AP20P02SI , AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , IRF540 , AP25G04GD , AP25N04D , AP25N04S , AP4406A , AP4406B , AP4407A , AP4407B , AP4409A .

History: AP220N10MP | AP20P02BF | AP220N08TLG1

Keywords - AP25G03GD MOSFET datasheet

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