AP45P06D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP45P06D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23.6 nS

Cossⓘ - Capacitancia de salida: 224 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: TO252

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AP45P06D datasheet

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AP45P06D

AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.1. Size:1635K  cn apm
 ap45p06nf.pdf pdf_icon

AP45P06D

AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

 7.2. Size:1894K  cn apm
 ap45p06f ap45p06p ap45p06t.pdf pdf_icon

AP45P06D

AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R

Otros transistores... AP25N04S, AP4406A, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B, IRFB4227, AP45P06NF, AP4606C, AP4953A, AP4953B, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA