AP45P06D Datasheet. Specs and Replacement
Type Designator: AP45P06D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23.6 nS
Cossⓘ - Output Capacitance: 224 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO252
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AP45P06D datasheet
ap45p06d.pdf
AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
ap45p06nf.pdf
AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
ap45p06f ap45p06p ap45p06t.pdf
AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
Detailed specifications: AP25N04S, AP4406A, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B, IRFB4227, AP45P06NF, AP4606C, AP4953A, AP4953B, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA
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