AP45P06D Spec and Replacement
Type Designator: AP45P06D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23.6 nS
Cossⓘ - Output Capacitance: 224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO252
AP45P06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP45P06D Specs
ap45p06d.pdf
AP45P06D -60V P-Channel Enhancement Mode MOSFET Description The AP45P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
ap45p06nf.pdf
AP45P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP45P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
ap45p06f ap45p06p ap45p06t.pdf
AP45P06FIPIT -60V P-Channel Enhancement Mode MOSFET Description The AP45P06F/P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-45A DS D R ... See More ⇒
Detailed specifications: AP25N04S , AP4406A , AP4406B , AP4407A , AP4407B , AP4409A , AP4435A , AP4435B , IRFB4227 , AP45P06NF , AP4606C , AP4953A , AP4953B , AP5N40D , AP5N50BD , AP5N50D , ATM3407PSA .
Keywords - AP45P06D MOSFET specs
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