ATM7414NDH Todos los transistores

 

ATM7414NDH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ATM7414NDH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: DFN3X3-8L

 Búsqueda de reemplazo de MOSFET ATM7414NDH

 

Principales características: ATM7414NDH

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ATM7414NDH

ATM7414NDH N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 18A Description excellent The ATM7414NDH uses advanced trench technology to provide RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a load switch or in PWM applications. Standard Product ATM7414NDH is Pb-free. Features V

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ATM7414NDH

ATM7430NDH N-Channel Fast Switching MOSFET Drain-Source Voltage 30V Continuous Drain Current 10.5A Description DFN3030 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features Low RDS(ON) ensures on state losses are minimized Small form fa

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History: DHZ24B31 | TK8Q60W | DJC070N65M2 | SL65N10Q

 

 
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