2N7002E Todos los transistores

 ..1. Size:92K  philips
 2n7002e.pdf

2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-s

 ..2. Size:182K  vishay
 2n7002e.pdf

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance 3 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

 ..3. Size:174K  vishay
 2n7002e 1.pdf

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance 3 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

 ..4. Size:78K  diodes
 2n7002e.pdf

2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-23 Low Gate Threshold Voltage Case Material UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Matte Tin Finish annealed over Alloy 42 leadfra

 ..5. Size:65K  onsemi
 2n7002e.pdf

2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) www.onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift Circ

 ..6. Size:95K  onsemi
 2n7002e 2.pdf

2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) http //onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift C

 ..7. Size:1201K  kexin
 2n7002e.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance RDS(ON) Low Gate Threshold Voltage 1 2 Low Input Capacitance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Ra

 ..8. Size:1274K  slkor
 2n7002e.pdf

2N7002E N-Channel Power MOSFET General Features VDS = 60V,ID = 300mA RDS(ON)

 ..9. Size:1028K  anbon
 2n7002e.pdf

2N7002E N-Channel SMD MOSFET ESD Protection 60V N-Channel Enhancement Mode MOSFET- ESD Protection Features Package outline RDS(ON), VGS@10V, ID@500mA=3.0 RDS(ON), VGS@4.5V, ID@200mA=4.0 SOT-23 ESD protection 2 V (Human body mode) Advanced trench process technology. High density cell design for ultra low on-resistance. Very low leakage current in off c

 ..10. Size:843K  cn vbsemi
 2n7002e.pdf

2N7002E www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1

 0.1. Size:143K  taiwansemi
 tsm2n7002e a07.pdf

 0.2. Size:382K  willas
 2n7002elt1.pdf

FM120-M WILLAS 2N7002ELT1 THRU Small Signal MOSFET 310 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounte N Channel SOT 23d ap

 0.3. Size:1214K  kexin
 2n7002e-3.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features Low On-Resistance RDS(ON) Low Gate Threshold Voltage 1 2 +0.02 Low Input Capacitance +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol

 0.4. Size:152K  chenmko
 2n7002esgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2N7002ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. (1)

 0.5. Size:451K  chenmko
 2n7002egp.pdf

CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing dens

 0.6. Size:569K  chenmko
 2n7002esegp.pdf

CHENMKO ENTERPRISE CO.,LTD 2N7002ESEGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and

 0.7. Size:605K  matsuki electric
 me2n7002e.pdf

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0 @VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5 @VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

 0.8. Size:307K  ubiq
 qm2n7002e3k1.pdf

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mA charge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

 0.9. Size:1157K  anbon
 2n7002ew.pdf

2N7002EW N-Channel MOSFET(ESD) SOT-323 Plastic-Encapsulate MOSFETS FEATURE High density cell design for Low RDS(on) SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION

 0.10. Size:622K  anbon
 2n7002et.pdf

2N7002ET N-Channel SMD MOSFET ESD Protection Product Summary V R I (BR)DSS DS(on)MAX D 3 @10V 60V 0.115A 4 @4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable Battery Switch High saturation current capability

 0.11. Size:909K  anbon
 2n7002ey.pdf

2N7002EY N-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 2.5 @10V 60V 0.3A 3.0 @4.5V Feature Application Trench Power MV MOSFET technology Battery operated systems Voltage controlled small signal switch Solid-state relays Low input Capacitance Fast Switching Speed Package Circuit diagram SOT-23 Marking 72K Document ID Issued

 0.12. Size:723K  anbon
 2n7002ed.pdf

 0.13. Size:1857K  cn tech public
 2n7002em3t5g.pdf

Marking RK * Or RK * =wafer tracking no