2N7002E Datasheet and Replacement

2N7002EN-channel TrenchMOS FETRev. 03 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-s

2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

2N7002EVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition60 3 at VGS = 10 V 240 Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directiv

2N7002EN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadfra

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift Circ

2N7002ESmall Signal MOSFET60 V, 310 mA, Single, N-Channel, SOT-23Features Low RDS(on)http://onsemi.com Small Footprint Surface Mount Package Trench TechnologyV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(Note 1)Compliant60 V 3.0 W @ 4.5 V 310 mAApplications 2.5 W @ 10 V Low Side Load Switch Level Shift C

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features 3Low On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2Low Input Capacitance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol Ra

2N7002EN-Channel Power MOSFET General Features VDS = 60V,ID = 300mA RDS(ON)

2N7002EN-Channel SMD MOSFET ESD Protection 60V N-Channel Enhancement Mode MOSFET- ESD ProtectionFeaturesPackage outline RDS(ON), VGS@10V, ID@500mA=3.0 RDS(ON), VGS@4.5V, ID@200mA=4.0 SOT-23 ESD protection 2V (Human body mode) Advanced trench process technology. High density cell design for ultra low on-resistance. Very low leakage current in off c

2N7002Ewww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

FM120-M WILLAS2N7002ELT1THRUSmall Signal MOSFET 310 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounteNChannel SOT23d ap

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2+0.02Low Input Capacitance +0.10.15 -0.020.95 -0.1+0.11.9 -0.2Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol

CHENMKO ENTERPRISE CO.,LTD2N7002ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and reliable.(1)

CHENMKO ENTERPRISE CO.,LTD2N7002EGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens

CHENMKO ENTERPRISE CO.,LTD2N7002ESEGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged and

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mAcharge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

2N7002EW N-Channel MOSFET(ESD)SOT-323 Plastic-Encapsulate MOSFETSFEATURE High density cell design for Low RDS(on)SOT-323 Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE ESD protected 3. DRAIN APPLICATION

2N7002ET N-Channel SMD MOSFET ESD ProtectionProduct Summary V R I (BR)DSS DS(on)MAX D3@10V 60V 0.115A 4@4.5V Feature Application High density cell design for ultra low on-resistance Load Switch for Portable Devices Voltage controlled small signal switch DC/DC Converter Rugged and reliable Battery Switch High saturation current capability

Marking RK * Or RK* =wafer tracking no